Industrial MBE

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MBE-600 molecular beam epitaxy system

MBE-600 molecular beam epitaxy system

The MBE-600 system is highly suitable for III-V, II-VI material applications, as it can epitaxy on 1, 2, and 3-inch substrates. Its vertical chamber design and various advanced components enable precise layer by layer epitaxy.

MBE-800 molecular beam epitaxy system

MBE-800 molecular beam epitaxy system

In order to achieve epitaxial growth of materials on 4-inch wafers, Fermion Instrument has launched the MBE-800 molecular beam epitaxy system. The standard version system adopts a dual temperature zone substrate heater and includes 12 evaporation source ports, which can achieve precise layer by layer growth of complex structured thin films. The customized version of MBE-800 also covers specific production needs, such as ultra-high vacuum ion assisted coating systems.

MBE-800P molecular beam epitaxy system

MBE-800P molecular beam epitaxy system

This research application device is equipped with 12 evaporation source installation ports, which are flexible and suitable for various material system research. It can epitaxy 3 pieces of 3-inch or 6-inch substrates at a time, with a simple and friendly operating interface and modular maintenance design. The structure is compact and energy-saving, especially using liquid nitrogen cold screen and low-power pump group, achieving high performance and cost savings.

MBE-1000 cluster molecular beam epitaxy system

MBE-1000 cluster molecular beam epitaxy system

Fermion Instrument has launched the MBE-1000 Cluster molecular beam epitaxy system, which can perform 5 × 3'',4×4'', Single piece 6''. Single piece 8'' Substrate epitaxial growth. This system can achieve fully automatic sample transfer and growth, making it very suitable for mass production of devices. The growth chamber adopts dual temperature zone substrate heating to achieve uniform and controllable growth temperature. The MBE-1000 system can be customized with 10 evaporation source ports or 12 evaporation source ports.

MBE-2000 molecular beam epitaxy system

MBE-2000 molecular beam epitaxy system

Batch production MBE system, economical, efficient, and high output Maximum epitaxial substrates of 9 × 4 inches, 4 × 6 inches, 15 × 3 inches, and 32 × 2 inches; MBE daily work is fully automated: sample transfer, beam calibration, epitaxial growth, etc; Can achieve 24/7 batch production mode. Equipped with an in-situ monitoring system to monitor growth status in real-time Reflective High Energy Electron Diffraction (RHEED), Beam Gauge (BFM), Residual Gas Analysis (RGA), with more reserved installation ports for in-situ monitoring equipment and the ability to upgrade and expand. The system occupies a small space and allows for twin long cavity modules The modular chamber structure system occupies less space than the same type of MBE system and can support two growth chamber modules, greatly increasing production and allowing incompatible material systems to grow. The system operation is simple and the average running cycle is long The system is easy to operate, with a simple and friendly interface, and comes with safety interlock alarm and anti misoperation functions. The modular multi chamber configuration is equipped with independent pump sets and gate valves for each chamber, making maintenance easy and convenient, and maximizing the normal operation time of the system.

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